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A vertical cavity light emitting InGaN quantum well heterostructure

Identifieur interne : 013F22 ( Main/Repository ); précédent : 013F21; suivant : 013F23

A vertical cavity light emitting InGaN quantum well heterostructure

Auteurs : RBID : Pascal:99-0260516

Descripteurs français

Pascal (Inist)
- 7866F, 8560J, 4255P, 4260B, 8530V, 4260D, Méthode mesure, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Diode électroluminescente, Laser puits quantique, Aluminium composé, Laser émission surface.

English descriptors

KwdEn :
- Aluminium compounds, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Light emitting diodes, Measuring methods, Quantum well lasers, Surface emitting lasers, Wide band gap semiconductors.

Abstract

A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exceeding 600 in initial experiments, suggesting that the approach can be useful for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. © 1999 American Institute of Physics.

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Pascal:99-0260516

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<front><div type="abstract" xml:lang="en">A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exceeding 600 in initial experiments, suggesting that the approach can be useful for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. © 1999 American Institute of Physics.</div>
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A vertical cavity light emitting InGaN quantum well heterostructure

A vertical cavity light emitting InGaN quantum well heterostructure

Descripteurs français

English descriptors

Abstract

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